Optical Silicon Modulator and Photonic Integration

被引：1

作者：

Liu, Ansheng ^{[1
]}

Liao, Ling ^{[1
]}

Basak, Juthika ^{[1
]}

Nguyen, Hat ^{[1
]}

Paniccia, Mario ^{[1
]}

Chetrit, Yoel ^{[2
]}

Rubin, Doron ^{[2
]}

机构：

[1] Intel Corp, 2200 Mission Coll Blvd, Santa Clara, CA 95054 USA

[2] Numonyx Israel Ltd, IL-82109 Qiryat Gat, Israel

来源：

2008 INTERNATIONAL TOPICAL MEETINGS ON MICROWAVE PHOTONICS AND 2008 ASIA-PACIFIC MICROWAVE PHOTONICS CONFERENCE | 2008年

关键词：

D O I：

10.1109/MWP.2008.4666695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we review recent results of high-speed silicon photonic modulators based on electrical-field-induced carrier depletion effect in a silicon-on-insulator waveguide. We also present detailed design, fabrication, and characterization of a photonic integrated circuit on a silicon platform. We demonstrate an aggregate data transmission rate of 200 Gb/s with 8 channels wavelength division multiplexing on a single silicon chip.

引用

页码：295 / +

页数：2

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