Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types

被引：0

作者：

Chaouache, M ^{[1
]}

Chtourou, R

Charfi, FF

Marzin, JY

Bloch, J

机构：

[1] IPEST, Unite Rech Phys Semicond, La Marsa 2070, Tunisia

[2] CNRS, Lab Photon & Nanstruct, UPR 20, F-75700 Paris, France

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 21卷 / 1-2期

关键词：

shallow quantum well; reflectance; exciton; line shape;

D O I：

10.1016/S0928-4931(02)00094-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an experimental study by photoluminescence (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：227 / 230

页数：4