Magnetic properties of exciton trapped by an off-center ionized donor in single quantum dot

被引:2
作者
Bosch, J. [1 ]
Talbi, A. [2 ,4 ]
Baskoutas, S. [3 ]
Feddi, E. [4 ]
机构
[1] Univ Valencia, Dept Appl Phys, Valencia, Spain
[2] Ibn Tofail Univ, Lab Mat Phys & Subat, Dept Phys, Fac Sci, Kenitra, Morocco
[3] Univ Patras, Dept Mat Sci, Patras, Greece
[4] Mohammed V Univ Rabat, ENSAM, Grp Optoelet Semicond & Nanomat, Rabat, Morocco
关键词
Exciton; Ionized donor; Binding energy; Localization energy; Diamagnetic shift;
D O I
10.1016/j.cap.2020.12.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is known that the lines of exciton (X) and exciton trapped by an ionized donor (D+, X) are often very close which makes very difficult their experimental identification. In order to facilitate their distinction in spherical quantum dots, we investigate the effect of an applied magnetic field studying the binding energy of the complex (D+, X) as function of dot size and the ionized donor position. Our calculation is using a variational approach taking into account the interactions between all charge carriers. Our results show that the complex is more sensitive to the magnetic field than the exciton and that the energy of the exciton is not sufficiently affected when the ionized donor is placed at the edge of the quantum dot. Finally our results are in a fairly good agreement with experimental data and can predict the behaviour law of the diamagnetic effect relating to (D+, X).
引用
收藏
页码:1 / 7
页数:7
相关论文
共 29 条
[11]   EXCITONS IN A HOMOGENEOUS MAGNETIC-FIELD - A MODIFIED PERTURBATION APPROACH [J].
GERLACH, B ;
RICHTER, D ;
POLLMANN, J .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 66 (04) :419-425
[12]  
Janssens KL, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.075314
[13]   QUANTUM-SIZE EFFECTS OF INTERACTING ELECTRONS AND HOLES IN SEMICONDUCTOR MICROCRYSTALS WITH SPHERICAL SHAPE [J].
KAYANUMA, Y .
PHYSICAL REVIEW B, 1988, 38 (14) :9797-9805
[14]   Single dopants in semiconductors [J].
Koenraad, Paul M. ;
Flatte, Michael E. .
NATURE MATERIALS, 2011, 10 (02) :91-100
[15]   Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells [J].
Liu, JJ ;
Zhang, SF ;
Li, YX ;
Kong, XJ .
EUROPEAN PHYSICAL JOURNAL B, 2001, 19 (01) :17-20
[16]   Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN [J].
Mair, RA ;
Li, J ;
Duan, SK ;
Lin, JY ;
Jiang, HX .
APPLIED PHYSICS LETTERS, 1999, 74 (04) :513-515
[17]  
Masumoto Y., 2002, SEMICONDUCTOR QUANTU
[18]   Ionized and neutral donor-bound excitons in ZnO [J].
Meyer, B. K. ;
Sann, J. ;
Lautenschlager, S. ;
Wagner, M. R. ;
Hoffmann, A. .
PHYSICAL REVIEW B, 2007, 76 (18)
[19]   Anomalous diamagnetic shift of excitons in II-VI quantum dots and in indirect short period superlattices [J].
Miura, N ;
Uchida, K ;
Yasuhira, T ;
Kurtz, E ;
Klingshirn, C ;
Nakashima, H ;
Issiki, F ;
Shiraki, Y .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :263-268
[20]   Heavily Doped Semiconductor Nanocrystal Quantum Dots [J].
Mocatta, David ;
Cohen, Guy ;
Schattner, Jonathan ;
Millo, Oded ;
Rabani, Eran ;
Banin, Uri .
SCIENCE, 2011, 332 (6025) :77-81