Silicon Germanium Cryogenic Low Noise Amplifiers

被引：6

作者：

Bardin, J. C. ^{[1
]}

Montazeri, S. ^{[1
]}

Chang, Su-Wei ^{[1
]}

机构：

[1] Univ Massachusetts Amherst, Dept Elect & Comp Engn, Marcus 201,100 Nat Resources Rd, Amherst, MA 01003 USA

来源：

12TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE ELECTRONICS | 2017年 / 834卷

关键词：

BASE BIPOLAR TECHNOLOGY; EPITAXIAL SI-BASE; 77-K APPLICATIONS; PROFILE DESIGN; TRANSISTORS; OPERATION; TEMPERATURE; PERFORMANCE; HBT; OPTIMIZATION;

D O I：

10.1088/1742-6596/834/1/012007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today's cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

引用

页数：12

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