Pulse electrochemical method for porosification of silicon and preparation of porSi powder with controllable particles size distribution

被引:5
|
作者
Bychto, L. [1 ]
Makushok, Y. [1 ]
Chirvony, V. [1 ]
Matveeva, E. [1 ]
机构
[1] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain
关键词
D O I
10.1002/pssc.200780128
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have proposed to use a special electrochemical regime to introduce a preferable grain size into the entirely porosified Si material. This periodic pulse electrochemical regime permits layering of the entire porosified film and defines its preferable partition in the post anodization mechanical treatment. Thus, a preferable grain size is "hidden" in the grown porSi film and is revealed only under additional mechanical treatment like milling. The pore dimension and total porosity are controlled by applied current density at the work pulse and prefabricated (hidden) grain size is introduced during an application of the cut or/and relaxation pulses. We have applied a described procedure to produce a sub-micrometric grain porSi powder and report results on SEM analysis of the material fabricated in different pulse regimes.
引用
收藏
页码:3789 / 3793
页数:5
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