Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers

被引：13

作者：

Cheng, Junyan ^{[1
]}

Quach, Patrick ^{[1
]}

Wang, Ding ^{[1
]}

Liu, Fang ^{[1
]}

Liu, Shangfeng ^{[1
]}

Yang, Liuyun ^{[1
]}

Liu, Huapeng ^{[1
]}

Shen, Bo ^{[1
,2
,3
]}

Tong, Yuzhen ^{[1
]}

Wang, Xinqiang ^{[1
,2
,3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[3] Peking Univ, NFC, Minist Educ, MOE, Beijing 100871, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期

基金：

中国国家自然科学基金;

关键词：

Quantum cascade lasers; GaN; Terahertz; Interface roughness scattering; DESIGN;

D O I：

10.1186/s11671-019-3043-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effect of interface roughness of quantum wells, non-intentional doping, and alloy disorder on performance of GaN-based terahertz quantum cascade lasers (QCL) has been investigated by the formalism of nonequilibrium Green's functions. It was found that influence of alloy disorder on optical gain is negligible and non-intentional doping should stay below a reasonable concentration of 10(17)cm(-3) in order to prevent electron-impurities scattering degradation and free carrier absorption. More importantly, interface roughness scattering is found the dominating factor in optical gain degradation. Therefore, its precise control during the fabrication is critical. Finally, a gain of 60cm(-1) can be obtained at 300K, showing the possibility of fabricating room temperature GaN Terahertz QCL.

引用

页数：7

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