Mobile ambipolar domain in carbon-nanotube infrared emitters

被引：139

作者：

Freitag, M ^{[1
]}

Chen, J

Tersoff, J

Tsang, JC

Fu, Q

Liu, J

Avouris, P

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Carbon Nanotechnol Inc, Houston, TX 77084 USA

[3] Duke Univ, Dept Chem, Durham, NC 27708 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.93.076803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and drain voltages. At high electric fields, additional stationary spots appear due to defect-assisted Zener tunneling or impact ionization. The laterally resolved measurement provides valuable insight into the transistor behavior, complementary to electronic device characteristics.

引用

页码：076803 / 1

页数：4

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