Mobile ambipolar domain in carbon-nanotube infrared emitters

被引：136
作者：
Freitag, M [1 ]
Chen, J
Tersoff, J
Tsang, JC
Fu, Q
Liu, J
Avouris, P
机构：
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Carbon Nanotechnol Inc, Houston, TX 77084 USA
[3] Duke Univ, Dept Chem, Durham, NC 27708 USA
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.93.076803
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and drain voltages. At high electric fields, additional stationary spots appear due to defect-assisted Zener tunneling or impact ionization. The laterally resolved measurement provides valuable insight into the transistor behavior, complementary to electronic device characteristics.
引用
收藏
页码：076803 / 1
页数：4
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