Ferroelectric properties of SBN thin films deposited by ion beam sputtering

被引：2
作者：
Lee, DG
Jang, JH
Kim, JJ
Cho, SH
Lee, HY [1 ]
机构：
[1] Yeungnam Univ, Dept Mat Sci & Engn, Kyongsan 712749, South Korea
[2] Kyungpook Natl Univ, Dept Inorgan Mat Engn, Taegu 702701, South Korea
来源：
FERROELECTRICS | 2004年 / 304卷
关键词：
electrical properties; ferroelectric thin film; Sr0.3Ba0.7Nb2O6; SBN; ion beam sputter deposition (IBSD);
D O I：
10.1080/00150190490456727
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Strontium barium niobate thin films with nominal composition corresponding to Sr0.30Ba0.70Nb2O6 (SBN30) were deposited onto Pt/Ti/SiO2/Si(100) substrate by ion beam sputter deposition (IBSD) technique. D-E hysteresis loops for Pt/SBN30/Pt capacitor samples were saturated after annealing treatment in air above 750 C, with remanent polarization (2Pr) value of about 22 muC/cm(2) and coercive field (Ec) of about 128 kV/cm. Relative permittivity and leakage current characteristics were also determined from C-V and I-V measurements.
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页码：1003 / 1007
页数：5
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