Structural and optical characterization of Zn doped CdSe films

被引：37

作者：

Perna, G

Capozzi, V

Ambrico, M

Augelli, V

Ligonzo, T

Minafra, A

Schiavulli, L

Pallara, M

机构：

[1] Univ Foggia, Dipartimento Sci Biomed, I-71100 Foggia, Italy

[2] Ist Nazl Fis Mat, Unita Bari, I-70126 Bari, Italy

[3] CNR, Ist Metodol Inorgan & Plasmi, I-70126 Bari, Italy

[4] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy

[5] Univ Bari, Dipartimento Geomineral, I-70126 Bari, Italy

来源：

APPLIED SURFACE SCIENCE | 2004年 / 233卷 / 1-4期

关键词：

optical characterization; CdSe; thin films; laser ablation;

D O I：

10.1016/j.apsusc.2004.03.252

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Undoped CdSe and CdSe:Zn thin films have been grown on silicon substrate by using pulsed laser deposition technique. The electrical, structural and optical properties have been investigated. The films grow crystalline and highly oriented. Electrical measurements show that they are n-type doped. The reflectivity and photoluminescence are consistent and point out that the undoped CdSe film present excitonic features at low temperature, differently from CdSe:Zn films, whose spectral features are related to band-band transition. The luminescence efficiency of CdSe:Zn persists up to room temperature, whereas the luminescence of undoped CdSe is scarcely visible above 250 K. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：366 / 372

页数：7

共 14 条

[1] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films [J].