共 50 条
- [41] High quality GaAs quantum wires grown by flow rate modulation epitaxy APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (02): : 137 - 141
- [43] Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI), 1999, 99 (17): : 64 - 69
- [47] Excitonic and free carrier recombination in InxGa1-xAs/GaAs V-shaped quantum wire for different in content PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 178 (01): : 243 - 248
- [48] INVESTIGATION OF GROWTH-PROCESSES IN FLOW-RATE MODULATION EPITAXY AND ATOMIC LAYER EPITAXY BY NEW INSITU OPTICAL MONITORING METHOD ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 139 - 145
- [49] Band-gap renormalization in modulation-doped In1-xGaxAs/GaAs V-shaped quantum wires PHYSICAL REVIEW B, 1999, 59 (03): : 2230 - 2233