Optical characterization of the self-limiting effect in flow-rate modulation epitaxy of V-shaped GaAs quantum wire

被引：5
|
作者：
Wang, XL
Mutsuo, O
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期
关键词：
D O I：
10.1063/1.125565
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence is used to characterize the self-limiting effect observed during flow-rate modulation epitaxy (FME) of GaAs quantum wires (QWRs) on V-grooved substrate. Our study found that not only the central thickness but also the overall cross-sectional wire shape is maintained to an atomic level in the self-limited growth regions. This result suggests that the self-limited FME technique is a very promising method for an atomically controlled fabrication of high-quality QWRs. (C) 1999 American Institute of Physics. [S0003-6951(99)04052-8].
引用
收藏
页码：4148 / 4150
页数：3
相关论文
共 50 条
  • [41] High quality GaAs quantum wires grown by flow rate modulation epitaxy
    Hamoudi, A
    Ogura, M
    Wang, XL
    Okada, T
    Matsuhata, H
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (02): : 137 - 141
  • [42] The electrical and optical characteristics of GaAs on Si by modified flow rate modulation epitaxy
    Lee, MK
    Hu, CC
    Hwang, CZ
    APPLIED SURFACE SCIENCE, 1996, 92 : 159 - 162
  • [43] Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy
    Kim, SI
    Park, YK
    Kim, YT
    Tan, HH
    Jagadish, C
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI), 1999, 99 (17): : 64 - 69
  • [44] Effect of pressure on spin-orbit interaction in a quantum wire with V-shaped cross section
    Khordad, R.
    SOLID STATE SCIENCES, 2013, 19 : 63 - 68
  • [45] PHOTOLUMINESCENCE FROM HIGHLY-FLAT-INTERFACE INAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
    SATO, M
    HORIKOSHI, Y
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 936 - 936
  • [46] PHOTOLUMINESCENCE FROM INGAAS-GAAS STRAINED-LAYER SUPERLATTICES GROWN BY FLOW-RATE MODULATION EPITAXY
    SATO, M
    HORIKOSHI, Y
    APPLIED PHYSICS LETTERS, 1988, 52 (02) : 123 - 126
  • [47] Excitonic and free carrier recombination in InxGa1-xAs/GaAs V-shaped quantum wire for different in content
    De Giorgi, M
    Anni, M
    Turco, C
    Passaseo, A
    Rinaldi, R
    Cannoletta, D
    Cingolani, R
    Lomascolo, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 178 (01): : 243 - 248
  • [48] INVESTIGATION OF GROWTH-PROCESSES IN FLOW-RATE MODULATION EPITAXY AND ATOMIC LAYER EPITAXY BY NEW INSITU OPTICAL MONITORING METHOD
    KOBAYASHI, N
    MAKIMOTO, T
    YAMAUCHI, Y
    HORIKOSHI, Y
    ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 139 - 145
  • [49] Band-gap renormalization in modulation-doped In1-xGaxAs/GaAs V-shaped quantum wires
    Rinaldi, R
    Coli', G
    Passaseo, A
    Cingolani, R
    PHYSICAL REVIEW B, 1999, 59 (03): : 2230 - 2233
  • [50] Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells
    Jeon, Seong-Ran
    Lee, Seung-Jae
    Jung, Seong Hoon
    Lee, Sang Hern
    Baek, Jong Hyeob
    Jeong, Hyeon
    Cha, Ok Hwan
    Suh, Eun-Kyung
    Jeong, Mun Seok
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (13)
12345