Optical characterization of the self-limiting effect in flow-rate modulation epitaxy of V-shaped GaAs quantum wire

被引：5
|
作者：
Wang, XL
Mutsuo, O
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期
关键词：
D O I：
10.1063/1.125565
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence is used to characterize the self-limiting effect observed during flow-rate modulation epitaxy (FME) of GaAs quantum wires (QWRs) on V-grooved substrate. Our study found that not only the central thickness but also the overall cross-sectional wire shape is maintained to an atomic level in the self-limited growth regions. This result suggests that the self-limited FME technique is a very promising method for an atomically controlled fabrication of high-quality QWRs. (C) 1999 American Institute of Physics. [S0003-6951(99)04052-8].
引用
收藏
页码：4148 / 4150
页数：3
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