Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

被引：2

作者：

Liu, Sheng-Hsien ^{[1
]}

Wu, Chi-Chang ^{[2
]}

Yang, Wen-Luh ^{[3
]}

Lin, Yu-Hsien ^{[4
]}

Chao, Tien-Sheng ^{[5
]}

机构：

[1] Feng Chia Univ, PhD Program Elect & Commun Engn, Taichung 40724, Taiwan

[2] Taipei Med Univ, Grad Inst Biomed Mat & Tissue Engn, Coll Oral Med, Taipei 11031, Taiwan

[3] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[4] Natl United Univ, Dept Elect Engn, Miaoli 36003, Taiwan

[5] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 09期

关键词：

Charge storage layer; flash memory; Ion bombardment (IB); NH3 plasma treatment (PT); TRANSIENT ANALYSIS METHOD; VERTICAL LOCATION; TRAPPED CHARGE; RETENTION; HFO2;

D O I：

10.1109/TED.2014.2341629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examined the application of ion bombardment (IB) and NH3 plasma treatment (PT) techniques in fabricating a high-performance Si3N4 charge storage layer. The IB technique can be used for creating numerous additional trap sites in the storage layer to enhance charge trapping efficiency and also causes changes in trap centroid location. In addition, the effect of centroid location on operation efficiency and reliability was investigated. Using gate-sensing and channel-sensing analysis, the changes in centroid location were demonstrated. In addition, the energy-level distribution of trap sites was clearly delineated by performing discharge-based multipulse analysis. The NH3 PT technique can substantially passivate IB-induced shallow trap sites to increase data retention time. The influence of the NH3 PT time on the memory characteristics of an IB-induced Si3N4 sample was investigated. The optimal characteristics of an ion-bombarded and plasma-passivated Si3N4 storage layer are presented. Compared with the conventional Si3N4 storage layer, the optimal ion-bombarded and plasma-passivated Si3N4 sample exhibited higher operation efficiency and superior reliability.

引用

页码：3179 / 3185

页数：7

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