Polymer films including polyethylene terephthalate (PET), polystyrene (PS) and polycarbonate (PC) were irradiated at room temperature with ions of 35 MeV/u Ar-40, 25 MeV/u Kr-85, 15.1 MeV/u Xe-136 and 11.4 MeV/U U-238 to fluences ranging from 9 x 10(9) to 5.5 x 10(12) ionS/cm(2). The radiation-induced chemical changes of the materials were investigated by Fourier-transform infrared (FTIR) and ultraviolet/visible spectroscopies. It is found that the absorbance in the ultraviolet and visible range induced by all irradiations follows a linear relationship with fluence. The radiation-induced absorbance normalized to one particle increases slowly with increasing of electronic energy loss below about 8 keV/nm followed by a sharp increase up to about 15 keV/nm above which saturation is reached. FTIR measurements reveal that the materials suffer serious degradation through bond breaking. The absorbance of the typical infrared bands decays exponentially with increase of ion fluence and the bond-disruption cross-section shows a sigmoid variation with electronic energy loss. In PET loss of crystallinity is attributed to the configuration transformation of the ethylene glycol residue from trans into the gauche. Alkyne end groups are induced in all the materials above certain electronic energy loss threshold, which is found to be about 0.8 keV/nm for PS and 0.4 keV/nm for PC. The production cross-section of alkyne end group increases with increasing of electronic energy loss and shows saturation at high electronic energy loss values. It is concluded that not only the physical processes but also the chemical processes of the energy deposition determine the modification of polymer. (C) 2002 Elsevier Science B.V. All rights reserved.
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Pontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, BrazilPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Thomaz, R.
Gutierres, L. I.
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Pontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, BrazilPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Gutierres, L. I.
Morais, J.
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Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, BrazilPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Morais, J.
Louette, P.
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Univ Namur, B-5000 Namur, BelgiumPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Louette, P.
Severin, D.
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GSI Helmholtz Ctr, Mat Res, D-64291 Darmstadt, GermanyPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Severin, D.
Trautmann, C.
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GSI Helmholtz Ctr, Mat Res, D-64291 Darmstadt, Germany
Tech Univ Darmstadt, D-64287 Darmstadt, GermanyPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Trautmann, C.
Pireaux, J. J.
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Univ Namur, B-5000 Namur, BelgiumPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
Pireaux, J. J.
Papaleo, R. M.
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Pontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, BrazilPontificia Univ Catolica Rio Grande do Sul, Fac Fis, BR-90619900 Porto Alegre, RS, Brazil
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Thapar Univ, Sch Phys & Mat Sci, Mat Res Lab, POB 32, Patiala 147004, Punjab, India
Inter Univ Accelerator Ctr, Mat Sci Grp, Aruna Asaf Ali Marg,POB 10502, New Delhi 110067, IndiaPanjab Univ, Dept Phys, Chandigarh 160014, India
Raina, K. K.
Avasthi, D. K.
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机构:Panjab Univ, Dept Phys, Chandigarh 160014, India