Air-Stable, Solution-Processed Oxide p-n Heterojunction Ultraviolet Photodetector

被引：83

作者：

Kim, Do Young ^{[1
]}

Ryu, Jiho ^{[1
]}

Manders, Jesse ^{[1
]}

Lee, Jaewoong ^{[1
]}

So, Franky ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 03期

关键词：

photodetector; ultraviolet; NiO; ZnO; solution process; NICKEL-OXIDE; POLYMER; DEGRADATION;

D O I：

10.1021/am4050019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

引用

页码：1370 / 1374

页数：5

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