Ballistic electron emission microscopy of Au-InAs-GaAs system

被引：8

作者：

Ke, ML ^{[1
]}

Westwood, DI ^{[1
]}

Matthai, CC ^{[1
]}

Richardson, BE ^{[1
]}

Williams, RH ^{[1
]}

机构：

[1] UNIV COLL SWANSEA, SWANSEA SA2 8PP, W GLAM, WALES

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.588833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an investigation of barrier formation and electron transport across InAs and GaAs interfaces by ballistic electron emission microscopy. The barrier height was found to decrease with the InAs thickness and the detailed variation correlates with the relaxation of the InAs layer. When the thickness is below one monolayer, three thresholds are observed and they are attributed to electron transmission into the Gamma, L, and X valleys of the GaAs, respectively. As the thickness increases to three monolayers or beyond, only two thresholds are observed and the reasons are explained in the context of the band structure of the system. (C) 1996 American Vacuum Society.

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页码：2786 / 2789

页数：4

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