Passivation of Crystalline Silicon Wafers by Ultrathin Oxide Layers: Comparison of Wet-chemical, Plasma and Thermal Oxidation Techniques

被引：0

作者：

Stegemann, Bert ^{[1
]}

Balamou, Patrice ^{[1
,2
]}

Lussky, Thomas ^{[2
]}

Gad, Karim M. ^{[3
]}

Voessing, Daniel ^{[3
]}

Kasemann, Martin ^{[3
]}

Angermann, Heike ^{[2
]}

机构：

[1] HTW Berlin Univ Appl Sci, Wilhelminenhofstr 75A, D-12459 Berlin, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie, Inst Silizium Photovolta, Kekulestr 5, D-12489 Berlin, Germany

[3] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

interface; oxidation; passivation; photovoltaic cells; silicon; INTERFACES;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Ultrathin oxide layers on crystalline silicon (c-Si) were prepared by different wet-chemical, plasma- and thermal oxidation techniques. The resulting electronic and chemical SiO2/Si interface properties were analyzed, compared and evaluated by combined x-ray photoemission (XPS) and surface photovoltage (SPV) measurements. Depending on the oxidation technique, chemically abrupt SiO2 /Si interfaces (suboxide amounts < 5 %) with low densities of interface states (< x10(12)cm(-2) eV-(1)) were obtained on c-Si either at low temperatures as well as at short oxidation times and in wet-chemical environment, resulting in each case in excellent interlace passivation. It is shown, that chemically abrupt SiO2/Si interfaces are able to generate low interface defect states densities.

引用

页码：2779 / 2782

页数：4

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