High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser

被引:20
作者
Makino, T [1 ]
Chia, CH
Segawa, Y
Kawasaki, M
Ohtomo, A
Tamura, K
Matsumoto, Y
Koinuma, H
机构
[1] RIKEN, Photodynam Res Ctr, Inst Phys & Chem Res, Sendai, Miyagi 9800845, Japan
[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
关键词
exciton; zinc oxide; semiconductor; lasers; pulsed laser deposition; stimulated emission; II-VI compounds; quantum wells; quantum confinement effect; combinatorial chemistry;
D O I
10.1016/S0169-4332(01)01001-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have developed a concurrent method of optical measurements using optical fiber bundles and charge coupled devices (CCDs), especially equipped for application to combinatorial samples. This approach can also be used for experiments performed at cryogenic temperatures. This combinatorial characterization method will be explained in detail. The dependence of the optical properties in combinatorial samples of ZnO/(Mg,Zn)O multi-quantum wells prepared by laser molecular-beam epitaxy upon well width was found to be smooth compared with the samples grown by a conventional method. The use of lattice-matched ScAlMgO4 substrates greatly improved the properties of quantum wells and, as a result, a bright photoluminescence (PL) of free excitons could be observed even at room temperature. In addition, the PL could be tuned in the energy range 3.3-3.6 eV by choosing the appropriate barrier height and well layer thickness. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:277 / 283
页数:7
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