Nanostructural conductivity and surface-potential study of low-field-emission carbon films with conductive scanning probe microscopy

被引:46
|
作者
Zhang, L [1 ]
Sakai, T [1 ]
Sakuma, N [1 ]
Ono, T [1 ]
Nakayama, K [1 ]
机构
[1] Toshiba Corp, Ctr Corp Res & Dev, Adv Discrete Semicond Technol Lab, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan
关键词
D O I
10.1063/1.125377
中图分类号
O59 [应用物理学];
学科分类号
摘要
Simultaneous surface topography and conductivity/potential measurements were carried out on low-field-emission (1 V/mu m) carbon films by combining conductive atomic force microscopy and Kelvin probe force microscopy. The current image showed that highly conducting sites and nonconducting regions coexisted on a micro- and/or nanoscale. Further, in situ I-V characteristics of both regions demonstrated that the conducting sites have an Ohmic property, whereas nonconducting regions have a degenerated Schottky property. When combined with the current image, the contact potential difference image showed that the conducting sites have a highest contact potential difference of 0.5 V, which implies the existence of a graphite phase. It is revealed that the conducting channels play an important role in the low-field-emission process. It is also suggested that the combination of conductivity and surface-potential measurements is an effective method for investigating complex-phase nanostructural surfaces. (C) 1999 American Institute of Physics. [S0003-6951(99)02148-8].
引用
收藏
页码:3527 / 3529
页数:3
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