Ab initio study of C60-silicon clusters

被引:16
作者
Masenelli, B [1 ]
Tournus, F [1 ]
Mélinon, P [1 ]
Pérez, A [1 ]
Blase, X [1 ]
机构
[1] Univ Lyon 1, DPM, CNRS, UMR 5568, F-69622 Villeurbanne, France
关键词
D O I
10.1063/1.1521430
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report on the energetics of C-60-Si clusters. By means of ab initio calculations based on the local density approximation to the density functional theory, we have investigated stable and metastable structures of C-60-Si, C-60-Si-C-60, and (C-60-Si)(2) clusters. In each case, we show that silicon preferentially binds to C-60 over a carbon-carbon double bond, in accordance with calculations on the interaction of C-60 with silicon surfaces. This bonding is characterized by a partial charge transfer from silicon to C-60. We show that the interaction between C-60 and silicon is local and not perturbed by the addition of more C-60-Si clusters or C-60 molecules. The binding energy for stable and metastable (C-60-Si)(nless than or equal to2) systems is high enough (several eV) to open the prospect of synthesizing nanostructured films from the C-60-Si unit. Furthermore, in all three cases, the silicon position on a fivefold symmetry axis is found to be a metastable position. The nature and structure of nanostructured films resulting from the deposition of these clusters is qualitatively discussed. (C) 2002 American Institute of Physics.
引用
收藏
页码:10627 / 10634
页数:8
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