Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs

被引：18

作者：

Ribeiro, E ^{[1
]}

Maltez, RL ^{[1
]}

Carvalho, W ^{[1
]}

Ugarte, D ^{[1
]}

Medeiros-Ribeiro, G ^{[1
]}

机构：

[1] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1513215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of self-assembled ternary InAsP quantum dots embedded into GaAs. A comparison between average sizes and recombination energies for different dot species (InAs, InAsP, and InP) confirms the formation of the ternary alloy islands. By carefully changing the growth conditions, we determined a global growth map for InAs, InAsP, and InP dots, showing that it is possible to tailor the optical characteristics of the InAsP species, thus covering the energy range between InAs and InP quantum dot emission. (C) 2002 American Institute of Physics.

引用

页码：2953 / 2955

页数：3

共 20 条

[1] VISIBLE PHOTOLUMINESCENCE FROM N-DOT ENSEMBLES AND THE LINEWIDTH OF ULTRASMALL ALYIN1-YAS ALXGA1-XAS QUANTUM DOTS [J].

FAFARD, S ;

LEON, R ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (11) :8086-8089

[2] Red-emitting semiconductor quantum dot lasers [J].

Fafard, S ;

Hinzer, K ;

Raymond, S ;

Dion, M ;

McCaffrey, J ;

Feng, Y ;

Charbonneau, S .

SCIENCE, 1996, 274 (5291) :1350-1353

[3] SELECTIVE EXCITATION OF THE PHOTOLUMINESCENCE AND THE ENERGY-LEVELS OF ULTRASMALL INGAAS/GAAS QUANTUM DOTS [J].

FAFARD, S ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1388-1390

[4] Electrical detection of optically induced charge storage in self-assembled InAs quantum dots [J].

Finley, JJ ;

Skalitz, M ;

Arzberger, M ;

Zrenner, A ;

Bohm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2618-2620

[5] NEW OPTICAL MEMORY STRUCTURE USING SELF-ASSEMBLED INAS QUANTUM DOTS [J].

IMAMURA, K ;

SUGIYAMA, Y ;

NAKATA, Y ;

MUTO, S ;

YOKOYAMA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A) :L1445-L1447

[6] VISIBLE LUMINESCENCE FROM SEMICONDUCTOR QUANTUM DOTS IN LARGE ENSEMBLES [J].

LEON, R ;

FAFARD, S ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :521-523

[7] Different paths to tunability in III-V quantum dots [J].

Leon, R ;

Lobo, C ;

Clark, A ;

Bozek, R ;

Wysmolek, A ;

Kurpiewski, A ;

Kaminska, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :248-254

[8] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].

MOISON, JM ;

HOUZAY, F ;

BARTHE, F ;

LEPRINCE, L ;

ANDRE, E ;

VATEL, O .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198

← 1 2 →