Flexible Graphene Field Effect Transistor with Graphene Oxide Dielectric on Polyimide Substrate

被引：0

作者：

Jewel, Mohi Uddin ^{[1
]}

Siddiquee, Tanvir Ahamed ^{[1
]}

Islam, Md. Rafiqul ^{[1
]}

机构：

[1] Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 9203, Bangladesh

来源：

2013 INTERNATIONAL CONFERENCE ON ELECTRICAL INFORMATION AND COMMUNICATION TECHNOLOGY (EICT) | 2013年

关键词：

Flexable GFET; Graphene Oxide; Polyimide substrate; Intrinsic cutoff frequency; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene is an excellent material for flexible electronics due to its high carrier transport properties. We report a flexible graphene field effect transistor on polyimide substrate using graphene oxide as top-gate dielectric. Good current saturation and peak hole and electron mobilities of 496 cm(2)/(V.s) and 164 cm(2)/(V.s) are observed, respectively, for the proposed intrinsic RF device. A maximum transconductance of 0.42 mS and the intrinsic cutoff frequency of 117 GHz are achieved when the gate length is reduced up to 0.25 mu m.

引用

页数：5

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