XPS Investigation of the Atomic Layer Deposition Half Reactions of Bis(N-tert-butyl-N′-ethylpropionamidinato) Cobalt(II)

被引:31
作者
Elko-Hansen, Tyler D. -M. [1 ]
Ekerdt, John G. [1 ]
机构
[1] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA
关键词
SURFACE-CHEMISTRY; CU INTERCONNECTS; COPPER; ELECTROMIGRATION; VOLATILE; GAS; ALD;
D O I
10.1021/cm5002237
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Adsorption of the atomic layer deposition (ALD) precursor bis(N-tert-butyl-N'-ethylpropionamidinato) cobalt(II) (CoAMD) on SiO2, carbon-doped oxide (CDO), and Cu is reported. Adsorption was performed under ALD cycling conditions with and without H-2 coreactant to mimic the first and second ALD half reactions on the substrates. Resultant surface chemistries were evaluated by X-ray photoelectron spectroscopy. Adsorption of CoAMD proved self-limiting and the precursor reduced readily on Cu with and without H-2 coreactant to form Co-0. Residual C and N signals on Cu suggest that amidinate ligands and decomposition fragments from CoAMD adsorb on the Cu surface. On SiO2 and CDO, CoAMD chemisorbs on O containing moieties, primarily OH, to form Co2+. Accumulation of Co after three ALD cycles was greatest on Cu and least on CDO.
引用
收藏
页码:2642 / 2646
页数:5
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