Optical parametric oscillation in quasi-phase-matched GaAs

被引：174

作者：

Vodopyanov, KL ^{[1
]}

Levi, O

Kuo, PS

Pinguet, TJ

Harris, JS

Fejer, MM

Gerard, B

Becouarn, L

Lallier, E

机构：

[1] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA

[2] Thales Res & Technol, F-91404 Orsay, France

来源：

OPTICS LETTERS | 2004年 / 29卷 / 16期

关键词：

D O I：

10.1364/OL.29.001912

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 mum.. Tuning either the near-IR pump wavelength between 1.8 and 2 mum or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 mum, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 muJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs. (C) 2004 Optical Society of America.

引用

页码：1912 / 1914

页数：3

共 10 条

[1]

Boyd R. W., 2003, NONLINEAR OPTICS

[2] MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy [J].

Ebert, CB ;

Eyres, LA ;

Fejer, MM ;

Harris, JS .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :187-193

[3]

Edwards D.F., 1985, Handbook of optical constants of solids

[4] All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion [J].

Eyres, LA ;

Tourreau, PJ ;

Pinguet, TJ ;

Ebert, CB ;

Harris, JS ;

Fejer, MM ;

Becouarn, L ;

Gerard, B ;

Lallier, E .

APPLIED PHYSICS LETTERS, 2001, 79 (07) :904-906

[5]

EYRES LA, 2001, THESIS STANFORD U ST

[6] DIFFUSION-BONDED STACKED GAAS FOR QUASI-PHASE-MATCHED 2ND-HARMONIC GENERATION OF A CARBON-DIOXIDE LASER [J].

GORDON, L ;

WOODS, GL ;

ECKARDT, RC ;

ROUTE, RR ;

FEIGELSON, RS ;

FEJER, MM ;

BYER, RL .

ELECTRONICS LETTERS, 1993, 29 (22) :1942-1944

[7] GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs (100) and (111) substrates for nonlinear optical devices [J].

Koh, S ;

Kondo, T ;

Ebihara, M ;

Ishiwada, T ;

Sawada, H ;

Ichinose, H ;

Shoji, I ;

Ito, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A) :L508-L511

[8] Difference frequency generation of 8-μm radiation in orientation-patterned GaAs [J].

Levi, O ;

Pinguet, TJ ;

Skauli, T ;

Eyres, LA ;

Parameswaran, KR ;

Harris, JS ;

Fejer, MM ;

Kulp, TJ ;

Bisson, SE ;

Gerard, B ;

Lallier, E ;

Becouarn, L .

OPTICS LETTERS, 2002, 27 (23) :2091-2093

[9] Improved dispersion relations for GaAs and applications to nonlinear optics [J].

Skauli, T ;

Kuo, PS ;

Vodopyanov, KL ;

Pinguet, TJ ;

Levi, O ;

Eyres, LA ;

Harris, JS ;

Fejer, MM ;

Gerard, B ;

Becouarn, L ;

Lallier, E .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6447-6455

[10] Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation [J].

Skauli, T ;

Vodopyanov, KL ;

Pinguet, TJ ;

Schober, A ;

Levi, O ;

Eyres, LA ;

Fejer, MM ;

Harris, JS ;

Gerard, B ;

Becouarn, L ;

Lallier, E ;

Arisholm, G .

OPTICS LETTERS, 2002, 27 (08) :628-630

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