Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface

被引：14

作者：

Lauer, J. L. ^{[1
,2
]}

Shohet, J. L. ^{[1
,2
]}

Nishi, Y. ^{[3
]}

机构：

[1] Univ Wisconsin Madison, Dept Elect & Comp Engn, Madison, WI 53706 USA

[2] Univ Wisconsin Madison, Plasma Proc & Technol Lab, Madison, WI 53706 USA

[3] Stanford Univ, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

charge exchange; hafnium compounds; high-k dielectric thin films; interstitials; rapid thermal annealing; semiconductor-insulator boundaries; silicon; silicon compounds; surface potential; ultraviolet radiation effects; ultraviolet spectra; VACUUM-ULTRAVIOLET SPECTRA; ABSOLUTE INTENSITIES; RADIATION-DAMAGE; GATE STACKS; OXIDE; LAYER; EMISSION;

D O I：

10.1063/1.3122925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the charging response of rapid thermally annealed (800 and 1000 degrees C) 4 nm thick HfO2 to as-deposited HfO2 on Si by measuring the surface potential of the HfO2 layers after vacuum ultraviolet (VUV) irradiation with 11.6 eV photons. From VUV spectroscopy, we determined all HfO2 layers show the presence of oxygen-interstitial defects (OIDs). The electronic states of OID in HfO2 line up in energy with oxygen-deficient Si centers within the SiO2 interfacial layer. This implies charge exchange between OIDs within HfO2 and the O-deficient silicon centers within the SiO2 interfacial layer are very important for controlling the radiation-induced trapped charge in HfO2 dielectric stacks.

引用

页数：3

共 14 条

[1] Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices
Cartier, E.
Hopstaken, M.
Copel, M.
APPLIED PHYSICS LETTERS, 2009, 95 (04)
[2] Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
Yan, Kai
Yao, Wenqing
Zhao, Yuanyuan
Yang, Liping
Cao, Jiangli
Zhu, Yongfa
APPLIED SURFACE SCIENCE, 2016, 390 : 260 - 265
[3] Interfacial growth at the HfO2/Si interface during annealing in oxygen ambient
Jiang, Ran
Li, Zifeng
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (06)
[4] Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks
Na, Heedo
Jeong, Juyoung
Lee, Jimin
Shin, Hyunsu
Lee, Sunghoon
Sohn, Hyunchul
CURRENT APPLIED PHYSICS, 2017, 17 (10) : 1361 - 1366
[5] First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface
Takagi, Kensuke
Ono, Tomoya
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (06)
[6] Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures
Abe, Yasuhiro
Miyata, Noriyuki
Ikenaga, Eiji
Suzuki, Haruhiko
Kitamura, Koji
Igarashi, Satoru
Nohira, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[7] Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric
Li, Ze
Yuan, Guo-Dong
Zhang, Di
Liu, Yu-Meng
Long, Hao-Ran
He, Li
Wang, De-Chen
Wei, Zhong-Ming
Luo, Jun-Wei
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (11)
[8] Evolution of chemical states within the HfO2/Si(100) interface upon annealing, prepared by direct electron beam evaporation
Fluechter, C. R.
Weier, D.
Schuermann, M.
Berges, U.
Doering, S.
Westphal, C.
SURFACE SCIENCE, 2008, 602 (15) : 2623 - 2627
[9] Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy
Qu, Guanghao
Min, Daomin
Zhao, Zhonghua
Frechette, Michel
Li, Shengtao
2018 IEEE 2ND INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD), 2018,
[10] The Effect of Annealing Temperature on the Structural and Optical Properties of Si/SiO2 Composites Synthesized by Thermal Oxidation of Silicon Wafers
Kayed, Kamal
Kurd, Dalal Baba
SILICON, 2022, 14 (10) : 5157 - 5163

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