Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method

被引：323

作者：

Galazka, Zbigniew ^{[1
]}

Uecker, Reinhard ^{[1
]}

Klimm, Detlef ^{[1
]}

Irmscher, Klaus ^{[1
]}

Naumann, Martin ^{[1
]}

Pietsch, Mike ^{[1
]}

Kwasniewski, Albert ^{[1
]}

Bertram, Rainer ^{[1
]}

Ganschow, Steffen ^{[1
]}

Bickermann, Matthias ^{[1
]}

机构：

[1] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 02期

关键词：

SOLAR-BLIND PHOTODETECTORS; OXIDE THIN-FILMS; GALLIUM OXIDE; GROWTH; TRANSPARENT;

D O I：

10.1149/2.0021702jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a new approach for scaling-up the growth of beta-Ga2O3 single crystals grown from the melt by the Czochralski method, which has also a direct application to other melt-growth techniques involving a noble metal crucible. Experimental and theoretical results point to melt thermodynamics as the crucial factor in increasing the volume of a growing crystal. In particular, the formation of metallic gallium in the liquid phase in large melt volumes causes problems with crystal growth and eutectic or intermetallic phase formation with the noble metal crucible. The larger crystals to be grown the higher oxygen concentration is required. The minimum oxygen concentration ranges from about 8 to 100 vol.% for 2 to 4 inch diameter cylindrical crystals, challenging the use of iridium crucibles in a combination with such high oxygen concentrations. A specific way of oxygen delivery to a growth furnace with the iridium crucible allows to minimize the formation of metallic gallium in the melt and thus obtaining large crystal volumes while decreasing the probability of the eutectic formation. (C) 2016 The Electrochemical Society. All rights reserved.

引用

页码：Q3007 / Q3011

页数：5

共 44 条

[1] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method [J].