Electro-optic tuning of vacuum rabi coupling in semiconductor quantum microcavity structures

被引：17

作者：

Fisher, TA ^{[1
]}

Afshar, AM ^{[1
]}

Skolnick, MS ^{[1
]}

Whittaker, DM ^{[1
]}

Roberts, JS ^{[1
]}

Hill, G ^{[1
]}

Pate, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期

关键词：

D O I：

10.1016/0038-1101(95)00276-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electro-optic tuning of vacuum Rabi coupling is demonstrated on a very high quality semiconductor quantum microcavity structure with reflectivity linewidths at resonance of 0.9 and 1.1 meV. The variation in energy of the reflectivity peaks as a function of electric field is fitted very well by a transfer matrix reflectivity (TMR) model, using an experimental determination of exciton oscillator strength, and hence exciton-photon coupling strength, with electric field. In high sensitivity photo-current experiments we obtain clear evidence for coupling to discrete excited and continuum exciton states.

引用

页码：493 / 496

页数：4

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