TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment

被引：6
作者：
Hijikuro, M.
Kuwano, N. [1 ]
Takeuchi, M. [2 ,3 ]
Aoyagi, Y. [2 ,3 ]
机构：
[1] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan
[2] RIKEN, Nanosci Dev & Support Team, Wako, Saitama 3510198, Japan
[3] Tokyo Inst Tech, Dept Informat Proc, Yokohama, Kanagawa 2268503, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期
关键词：
D O I：
10.1002/pssc.200565157
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transmission electron microscope (TEM) observation was performed for the anti-surfactant (AS) treated GaN layer in order to clarify the annihilation process of dislocations. The morphology of dislocations in 3-dimension was analyzed in a stereographical way by using a high-voltage TEM. It was revealed that most of the threading dislocations are laid down on the AS-treated surface and merge with one another to form a network of dislocations (sweep-up process). The dislocations then decrease in number after the merging by cancellation of their Burgers vectors. It was also revealed that a thin layer is formed on the AS-treated surface. The layer was confirmed to be crystalline. (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：1832 / 1835
页数：4
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