Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

The Pt/beta-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented beta-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/beta-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 10(10), ideality factor (n) of 1.1, Schottky barrier height (Phi(B)) of 1.39 eV, threshold voltage (V-bi) of 1.07 V, ON-resistance (R-ON) of 12.5 m Omega.cm(2), forward current density at 2V (J(@2V)) of 56 A/cm(2), and saturation current density (J(0)) of 2 x 10(-16) A/cm(2). The effective donor concentration N-d - N-a was calculated to be about 2.3 x 10(14) cm(3). Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 degrees C. With increasing temperature, parameters such as R-ON and J(@2V) become better, proving that the diode can work well at high temperature. The EFG grown beta-Ga2O3 single crystal is a promising material to be used in the power devices. (C) 2017 Author(s).