Monte Carlo study of the step flow to island nucleation transition for close packed structures

被引:16
作者
Camarda, Massimo [1 ]
La Magna, Antonino [1 ]
La Via, Francesco [1 ]
机构
[1] CNR, IMM, I-95121 Catania, Italy
关键词
Epitaxy; Kinetic Monte Carlo; Defects; Homoepitaxial growth; EPITAXIAL-GROWTH; VICINAL SURFACES; DEFECT FORMATION; KINETICS; EVOLUTION; SILICON;
D O I
10.1016/j.susc.2009.04.030
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using joined super-lattice Kinetic Monte Carlo and continuous simulations we study the transition between step flow and two-dimensional island nucleation growth on stepped surfaces for close packed crystalline structures. The numerical analysis is performed in terms of misorientation cut, deposition rate and temperature. We compare the results of the atomistic approach with the predictions of the standard and generalized Burton-Cabrera-Frank (BCF) continuous model. The generalization consists in the explicit inclusion in the theory of the formation and dissolution of mobile dimers on the terraces. We show that the BCF-like continuous theories break down for low temperatures, large off-angle cuts and high deposition rates. In view of these results we critically discuss the basic assumptions of the continuous models. (c) 2009 Elsevier B.V. All rights reserved,
引用
收藏
页码:2226 / 2229
页数:4
相关论文
共 13 条
[1]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[2]   Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study [J].
Camarda, M. ;
La Magna, A. ;
Fiorenza, P. ;
Giannazzo, F. ;
La Via, F. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (05) :971-975
[3]   Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC [J].
Camarda, M. ;
La Magna, A. ;
La Via, F. .
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :73-76
[4]   Theoretical Monte Carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC [J].
Camarda, M. ;
La Magna, A. ;
Fiorenza, P. ;
Izzo, G. ;
La Via, F. .
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :135-138
[5]   A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures [J].
Camarda, Massimo ;
La Magna, Antonino ;
La Via, Francesco .
JOURNAL OF COMPUTATIONAL PHYSICS, 2007, 227 (02) :1075-1093
[6]   THE KINETICS OF FAST STEPS ON CRYSTAL-SURFACES AND ITS APPLICATION TO THE MOLECULAR-BEAM EPITAXY OF SILICON [J].
GHEZ, R ;
IYER, SS .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (06) :804-818
[7]   ANALYTICAL SOLUTION OF GENERALIZED BURTON-CABRERA-FRANK EQUATIONS FOR GROWTH AND POSTGROWTH EQUILIBRATION ON VICINAL SURFACES [J].
HARRIS, S ;
SMILAUER, P .
PHYSICAL REVIEW B, 1994, 50 (11) :7952-7961
[8]   MICROSCOPIC THEORY OF EPITAXIAL-GROWTH ON VICINAL SURFACES [J].
HARRIS, S .
PHYSICAL REVIEW B, 1993, 47 (16) :10738-10742
[9]   SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES [J].
KIMOTO, T ;
MATSUNAMI, H .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :850-859
[10]   Thick Epitaxial Layers Growth by Chlorine Addition [J].
La Via, F. ;
Izzo, G. ;
Camarda, M. ;
Abbondanza, G. ;
Crippa, D. .
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :55-60