Accurate temperature estimation in large DMOS transistors using a semi-empirical thermal conductivity model

被引：0

作者：

Costachescu, Dragos ^{[1
]}

Goras, Liviu ^{[2
,3
]}

Pfost, Martin ^{[4
]}

机构：

[1] Infineon Technol Romania, IFRO ATV TM, Bucharest, Romania

[2] Tech Univ Iasi, Gheorghe Asachi, Iasi, Romania

[3] Romanian Acad, Inst Comp Sci, Bucharest 010071, Romania

[4] Reutlingen Univ, Robert Bosch Ctr Power Elect, Reutlingen, Germany

来源：

2011 10TH INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS (ISSCS) | 2011年

关键词：

SIMULATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for improving the temperature estimation accuracy in large DMOS transistors based on a semi-empirical fitting model for the Si thermal conductivity is presented. The model is used in the analytical solution of the 3D transient heat equation. The performances of the method are further improved by taking into account the power metallisation using a simple RC thermal model. Measurement results show that using this approach, not only the peak temperature, but also the temperature distribution across the device are accurately estimated.

引用

页数：4

共 8 条

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