Cascaded and Resonant SRAM Supply Boosting for Ultra-Low Voltage Cognitive IoT Applications

被引：0

作者：

Joshi, Rajiv V. ^{[1
]}

Ziegler, Matthew M. ^{[1
]}

Swaminathan, Karthik ^{[1
]}

Chandramoorthy, Nandhini ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2018 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To enable ultra-low power cognitive IoT systems, we present novel supply boosting techniques allowing low voltage SRAM. These techniques include enhancements at both the device and circuit levels. A new 14nm SOI test chip employing the techniques shows functional 8T SRAM down to 0.24V. We also show how supply boosting can lead to lower voltage operation of cognitive IoT applications using an example of a neural network running the MNIST benchmark.

引用

页数：4