Controllable spin-dependent transport in armchair graphene nanoribbon structures

被引:48
|
作者
Nguyen, V. Hung [1 ,2 ]
Do, V. Nam [3 ]
Bournel, A. [1 ]
Nguyen, V. Lien [2 ]
Dollfus, P. [1 ]
机构
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] VAST, Inst Phys, Dept Theoret, Hanoi 10000, Vietnam
[3] Hanoi Adv Sch Sci & Technol, Hanoi 10000, Vietnam
关键词
energy gap; graphene; Green's function methods; nanostructured materials; spin polarised transport; tight-binding calculations; tunnelling; TRANSMISSION; POTENTIALS; DEVICES; RIBBONS; STATE; EDGE;
D O I
10.1063/1.3212984
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the nonequilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbons controlled by a ferromagnetic gate is investigated. Beyond the oscillatory behavior of conductance and spin polarization with respect to the barrier height, which can be tuned by the gate voltage, we especially analyze the effects of width-dependent band gap and of the nature of contacts. The oscillation of spin polarization in graphene nanoribbons with a large band gap is strong in comparison with that in infinite graphene sheets. Very high spin polarization (close to 100%) is observed in normal-conductor/graphene/normal-conductor junctions. Moreover, we find that the difference in electronic structure between normal conductor and graphene generates confined states which have a strong influence on the transport properties of the device. This study suggests that the device should be carefully designed to obtain a high controllability of spin-polarized current.
引用
收藏
页数:7
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