Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

被引:83
作者
Anderson, Travis [1 ]
Ren, Fan [2 ]
Pearton, Stephen [3 ]
Kang, Byoung Sam [1 ]
Wang, Hung-Ta [1 ]
Chang, Chih-Yang [1 ]
Lin, Jenshan [3 ]
机构
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
关键词
GaN; ZnO; gas sensors; FIELD-EFFECT TRANSISTORS; SENSING CHARACTERISTICS; HIGH-TEMPERATURE; ALGAN/GAN HEMTS; SILICON-CARBIDE; OXIDE NANOWIRES; HIGH-POWER; PERFORMANCE; DIODES; PT/GAN;
D O I
10.3390/s90604669
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.
引用
收藏
页码:4669 / 4694
页数:26
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