Optically pumped, indirect-gap AlxGa1-xAs lasers

被引:0
作者
Worner, A [1 ]
Westphaling, R [1 ]
Kalt, H [1 ]
Kohler, K [1 ]
机构
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 64卷 / 01期
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We demonstrate optically pumped lasers with active layers of indirect-gap AlxGa1-xAs operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively, The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the electron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.
引用
收藏
页码:73 / 76
页数:4
相关论文
共 50 条
[41]   Magnetic field stabilized electron-hole liquid in indirect-band-gap AlxGa1-xAs [J].
Alberi, K. ;
Fluegel, B. ;
Crooker, S. A. ;
Mascarenhas, A. .
PHYSICAL REVIEW B, 2016, 93 (07)
[42]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF NATIVE DEFECTS IN ALXGA1-XAS [J].
KENNEDY, TA ;
MAGNO, R ;
SPENCER, MG .
PHYSICAL REVIEW B, 1988, 37 (11) :6325-6331
[43]   GAMMA-X MIXING IN GAAS ALXGA1-XAS AND ALXGA1-XAS ALAS SUPERLATTICES [J].
TING, DZY ;
CHANG, YC .
PHYSICAL REVIEW B, 1987, 36 (08) :4359-4374
[44]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF SI DONORS IN ALXGA1-XAS [J].
MONTIE, EA ;
HENNING, JCM ;
COSMAN, EC .
PHYSICAL REVIEW B, 1990, 42 (18) :11808-11817
[45]   OBSERVATION OF OPTICALLY DETECTED MAGNETIC-RESONANCE SIGNALS IN ALXGA1-XAS [J].
SPENCER, MG ;
KENNEDY, TA ;
MAGNO, R ;
GRIFFIN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :762-765
[46]   BAND-GAP RENORMALIZATION IN DIRECT-BAND-GAP ALXGA1-XAS [J].
RINKER, M ;
KALT, H ;
REIMANN, K ;
LU, YC ;
BAUSER, E .
PHYSICAL REVIEW B, 1990, 42 (11) :7274-7276
[47]   Amorphization mechanisms in AlxGa1-xAs [J].
Lagow, BW ;
Turkot, BA ;
Robertson, IM ;
Rehn, LE ;
Baldo, PM ;
Roh, SD ;
Forbes, DV ;
Coleman, JJ .
MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 :199-204
[48]   Amorphization mechanisms in AlxGa1-xAs [J].
Lagow, BW ;
Turkot, BA ;
Robertson, IM ;
Rehn, LE ;
Baldo, PM ;
Roh, SD ;
Forbes, DV ;
Coleman, JJ .
MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 :197-202
[49]   LONGITUDINAL PIEZORESISTANCE OF ALXGA1-XAS [J].
MCGRODDY, JC ;
LORENZ, MR ;
SMITH, JE .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1852-&
[50]   OMVPE GROWTH OF ALXGA1-XAS [J].
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :42-52