Optically pumped, indirect-gap AlxGa1-xAs lasers

被引：0

作者：

Worner, A ^{[1
]}

Westphaling, R ^{[1
]}

Kalt, H ^{[1
]}

Kohler, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 64卷 / 01期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate optically pumped lasers with active layers of indirect-gap AlxGa1-xAs operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively, The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the electron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.

引用

页码：73 / 76

页数：4

共 50 条

[21] IMPROVED ALXGA1-XAS BULK LASERS WITH SUPERLATTICE INTERFACES [J].

FISCHER, R ;

KLEM, J ;

DRUMMOND, TJ ;

KOPP, W ;

MORKOC, H ;

ANDERSON, E ;

PION, M .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :1-3

[22] Pressure and composition effects on the gap properties of AlxGa1-xAs [J].

1600, American Inst of Physics, Woodbury, NY, USA (74)

[23] PRESSURE AND COMPOSITION EFFECTS ON THE GAP PROPERTIES OF ALXGA1-XAS [J].

CAPAZ, RB ;

DEARAUJO, GC ;

KOILLER, B ;

VONDERWEID, JP .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5531-5537

[24] PHOTOLUMINESCENCE OF ALXGA1-XAS [J].

SHAH, J ;

MILLER, BI ;

DIGIOVAN.AE .

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03) :326-&

[25] OPTICAL INVESTIGATIONS ON INDIRECT-BAND-GAP ALXGA1-XAS/ALYGA1-YAS SUPERLATTICES [J].

PISTOL, ME ;

PAULSSON, G ;

SAMUELSON, L ;

RASK, M ;

LANDGREN, G .

PHYSICAL REVIEW B, 1988, 38 (18) :13222-13226

[26] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier [J].

Kim, DS ;

Ko, HS ;

Kim, YM ;

Rhee, SJ ;

Hong, SC ;

Yee, DS ;

Woo, JC ;

Choi, HJ ;

Ihm, J .

17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 :729-730

[27] Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in AlxGa1-xAs [J].

Beaton, Daniel A. ;

Alberi, Kirstin ;

Fluegel, Brian ;

Mascarenhas, Angelo ;

Reno, John L. .

APPLIED PHYSICS EXPRESS, 2013, 6 (07)

[28] PHOTOLUMINESCENCE OF ALXGA1-XAS [J].

SHAH, J ;

DIGIOVANNI, AE ;

MILLER, BI .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3436-+

[29] RADIATIVE DECAY OF INDIRECT EXCITONS IN ALXGA1-XAS NEAR CROSSOVER [J].

STURGE, MD ;

COHEN, E ;

LOGAN, RA .

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03) :421-421

[30] SPECTRAL BROADENING OF PULSATING ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS [J].

VANDERZIEL, JP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (11) :1277-1281

← 1 2 3 4 5 →