Optically pumped, indirect-gap AlxGa1-xAs lasers

被引：0

作者：

Worner, A ^{[1
]}

Westphaling, R ^{[1
]}

Kalt, H ^{[1
]}

Kohler, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 64卷 / 01期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate optically pumped lasers with active layers of indirect-gap AlxGa1-xAs operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively, The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the electron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.

引用

页码：73 / 76

页数：4

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