Post-growth processing of 1.55 μm InP/InGaAs/InGaAsP material for integrated laser-modulator device fabrication

被引：0
|
作者：
Aimez, V [1 ]
Beauvais, J [1 ]
Beerens, J [1 ]
Lim, HS [1 ]
Ng, SL [1 ]
Ooi, BS [1 ]
机构：
[1] Univ Sherbrooke, Ctr Rech Proprietes Elect Mat Avances, Dept Elect Engn, Sherbrooke, PQ J1K 2R1, Canada
来源：
INTEGRATED PHOTONICS RESEARCH, TECHNICAL DIGEST | 2000年 / 45卷
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Low energy ion implantation induced intermixing has been used to selectively blueshift 1.55 mum InP/InGaAs/InGaAsP material. Intra-cavity electro-absorption modulators have been fabricated using this method. Integrated laser-modulator device parameters show no indication of degradation following the intermixing process. (C) 1999 Optical Society of America.
引用
收藏
页码：135 / 137
页数：3
相关论文
共 25 条
  • [1] Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures
    Aimez, V
    Beauvais, J
    Beerens, J
    Ng, SL
    Ooi, BS
    APPLIED PHYSICS LETTERS, 2001, 79 (22) : 3582 - 3584
  • [2] 1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device
    Luo, Yi
    Wen, Guopeng
    Sun, Changzheng
    Li, Tongning
    Yang, Xinmin
    Wang, Renfan
    Wang, Cailing
    Jin, Jinyan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (07): : 557 - 560
  • [3] 2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device
    Luo, Yi
    Sun, Changzheng
    Wen, Guopeng
    Li, Tongming
    Yang, Xinmin
    Wu, Yousheng
    Wang, Renfan
    Wang, Cailing
    Huang, Tao
    Jin, Jinyan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (05): : 416 - 420
  • [4] 1.55 μm InGaAsP/InP partially gain-coupled distributed feedback laser electroabsorption modulator integrated device for trunk line communication
    Luo, Y
    Wen, GP
    Sun, CZ
    Li, TN
    Yang, XM
    Wang, RF
    Wang, CL
    Jin, JY
    SEMICONDUCTOR LASERS III, 1998, 3547 : 1 - 3
  • [5] 1.55 μm InP/InGaAsP/InP laser wafer prepared by different temperature growth
    Li, Xuechun
    Hu, Lizhong
    Sai, Na
    Yan, Zhiming
    Dalian Ligong Daxue Xuebao/Journal of Dalian University of Technology, 1998, 38 (03): : 270 - 272
  • [6] Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser
    柯青
    谭少阳
    刘松涛
    陆丹
    张瑞康
    王圩
    吉晨
    Journal of Semiconductors, 2015, 36 (09) : 93 - 96
  • [7] Integrated 1.3μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure
    Knödl, T
    Hanke, C
    Saravanan, BK
    Peschke, M
    Schreiner, R
    Stegmüller, B
    INTEGRATED OPTICS AND PHOTONIC INTEGRATED CIRCUITS, 2004, 5451 : 1 - 7
  • [8] Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates
    李小波
    黄永清
    王俊
    段晓峰
    张瑞康
    李业弘
    刘正
    王琦
    张霞
    任晓敏
    ChineseOpticsLetters, 2015, 13 (03) : 36 - 40
  • [9] Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates
    Li, Xiaobo
    Huang, Yongqing
    Wang, Jun
    Duan, Xiaofeng
    Zhang, Ruikang
    Li, Yehong
    Liu, Zheng
    Wang, Qi
    Zhang, Xia
    Ren, Xiaomin
    CHINESE OPTICS LETTERS, 2015, 13 (03)
  • [10] Fabrication and optimization of 1.55-mu m InGaAsP/InP high-power semiconductor diode laser
    Ke Qing
    Tan Shaoyang
    Liu Songtao
    Lu Dan
    Zhang Ruikang
    Wang Wei
    Ji Chen
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (09)
123