Bulk pinning by planar defects in Ti-doped Bi-2212 single crystals

被引：4
|
作者：
Drost, RJ
Li, TW
Kes, PH
Surdeanu, R
Wijngaarden, RJ
Konczykowski, M
机构：
[1] VRIJE UNIV AMSTERDAM,FAC PHYS & ASTRON,NL-1081 HV AMSTERDAM,NETHERLANDS
[2] ECOLE POLYTECH,CNRS,URA 1380,SOLIDES IRRADIES LAB,F-91128 PALAISEAU,FRANCE
来源：
PHYSICA C | 1997年 / 282卷
关键词：
D O I：
10.1016/S0921-4534(97)01193-3
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate that Ti-doping in Bi2Sr2CaCu2O8+x (Bi-2212) single crystals results in significantly enhanced pinning properties due to the formation of a peculiar planar defect strucure induced by the dopant.
引用
收藏
页码：2241 / 2242
页数：2
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