Interface structure of selectively oxidized AlAs/GaAs

被引：51
作者：
Takamori, T
Takemasa, K
Kamijoh, T
机构：
[1] Semiconductor Technology Laboratory, R. and D. Group, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 05期
关键词：
D O I：
10.1063/1.117797
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present studies of the interface abruptness of selectively oxidized AlAs/GaAs multilayer structures using transmission electron microscopy (TEM). High-resolution cross-sectional TEM images reveal that the interfaces between oxidized AlAs and unoxidized regions (GaAs and AlAs) are extremely abrupt of atomic scale. The widths of the transitional region are found to be within 4 monolayers for the interface between oxidized AlAs and unoxidized GaAs and 6.5 nm for the one between oxidized and unoxidized AlAs. The oxide layer thickness is found to decrease gradually from the oxidation front over a length of 200 nm. (C) 1996 American Institute of Physics.
引用
收藏
页码：659 / 661
页数：3
相关论文
共 18 条
[1]   SPONTANEOUS-EMISSION COUPLING FACTOR AND MODE CHARACTERISTICS OF PLANAR DIELECTRIC MICROCAVITY LASERS [J].
BJORK, G ;
HEITMANN, H ;
YAMAMOTO, Y .
PHYSICAL REVIEW A, 1993, 47 (05) :4451-4463
[2]   LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].
CHOQUETTE, KD ;
SCHNEIDER, RP ;
LEAR, KL ;
GEIB, KM .
ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044
[3]   CAVITY CHARACTERISTICS OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].
CHOQUETTE, KD ;
LEAR, KL ;
SCHNEIDER, RP ;
GEIB, KM .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3413-3415
[4]   FABRICATION AND PERFORMANCE OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].
CHOQUETTE, KD ;
LEAR, KL ;
SCHNEIDER, RP ;
GEIB, KM ;
FIGIEL, JJ ;
HULL, R .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1237-1239
[5]   HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].
DALLESASSE, JM ;
HOLONYAK, N ;
SUGG, AR ;
RICHARD, TA ;
ELZEIN, N .
APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846
[6]   VERY-LOW-THRESHOLD INDEX-CONFINED PLANAR MICROCAVITY LASERS [J].
DEPPE, DG ;
HUFFAKER, DL ;
SHIN, J ;
DENG, Q .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (09) :965-967
[7]  
FLOYD PD, 1995, P 8 ANN M IEEE LAS E, P414
[8]   RECORD LOW-THRESHOLD INDEX-GUIDED INGAAS/GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A NATIVE-OXIDE CONFINEMENT STRUCTURE [J].
HAYASHI, Y ;
MUKAIHARA, T ;
HATORI, N ;
OHNOKI, N ;
MATSUTANI, A ;
KOYAMA, F ;
IGA, K .
ELECTRONICS LETTERS, 1995, 31 (07) :560-562
[9]   RESONANT-CAVITY LIGHT-EMITTING DIODE WITH AN ALXOY/GAAS REFLECTOR [J].
HUFFAKER, DL ;
LIN, CC ;
SHIN, J ;
DEPPE, DG .
APPLIED PHYSICS LETTERS, 1995, 66 (23) :3096-3098
[10]   SPONTANEOUS COUPLING TO PLANAR AND INDEX-CONFINED QUASIMODES OF FABRY-PEROT MICROCAVITIES [J].
HUFFAKER, DL ;
DEPPE, DG .
APPLIED PHYSICS LETTERS, 1995, 67 (18) :2594-2596
12