Improvement of conversion efficiency of multi-crystalline silicon solar cells using reactive ion etching with surface pre-etching

被引:10
作者
Chen, Wen-Hua [2 ]
Lin, Hsin-Han [2 ]
Hong, Franklin Chau-Nan [1 ,2 ,3 ,4 ]
机构
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Ctr Micronano Sci & Technol, Tainan 701, Taiwan
[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
关键词
Silicon; Nanostructures; Anti-reflection; Reactive ion etching; Solar cells; MULTICRYSTALLINE SILICON; ANTIREFLECTIVE NANOSTRUCTURES; FABRICATION; ABSORPTION; ARRAYS;
D O I
10.1016/j.tsf.2015.10.056
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, a large-area (156 x 156 mm(2)) sub-wavelength antireflection structure has been fabricated on multi-crystalline Si substrates to reduce their surface reflectivity. A reactive ion etching (RIE) system was used to fabricate nanostructures on the multi-crystalline silicon surface. Reactive gases, comprised of chlorine (Cl-2), sulfur hexafluoride (SF6) and oxygen (O-2), were activated to fabricate nanoscale pyramids by radio frequency plasma. The pre-etching of poly-Si substrates using acidic and alkaline solutions was studied for creating the microstructures, which may affect the subsequent formation of nano-structures by RIE. Both the solar reflectance and the effective carrier lifetimes of multi-crystalline Si surface are measured to understand the effects of two pre-etching solutions. The pre-etching of silicon wafers using the acidic solution before RIE was found to improve the solar cell efficiency better than that using the alkaline solution. The absolute efficiency of solar cells with acidic pre-etching and RIE texturing can be improved by 0.64% over the traditional conventional cells. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:50 / 56
页数:7
相关论文
共 18 条
[1]   Reduction of absorption loss in multicrystalline silicon via combination of mechanical grooving and porous silicon [J].
Ben Rabha, Mohamed ;
Mohamed, Seifeddine Belhadj ;
Dimassi, Wissem ;
Gaidi, Mounir ;
Ezzaouia, Hatem ;
Bessais, Brahim .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03) :883-886
[2]   Study of SF6/N2O Microwave Plasma for Surface Texturing of Multicrystalline (< 150 μm) Solar Substrates [J].
Chan, Boon Teik ;
Kunnen, Eddy ;
Uhlig, Matthias ;
de Marneffe, Jean-Francois ;
Xu, Kaidong ;
Boullart, Werner ;
Rau, Bernd ;
Poortmans, Jef .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (10)
[3]   Efficiency improved by acid texturization for multi-crystalline silicon solar cells [J].
Cheng, Yuang-Tung ;
Ho, Jyh-Jier ;
Tsai, Song-Yeu ;
Ye, Zong-Zhi ;
Lee, William ;
Hwang, Daw-Shang ;
Chang, Shun-Hsyung ;
Chang, Chiu-Cheng ;
Wang, Kang L. .
SOLAR ENERGY, 2011, 85 (01) :87-94
[4]   Colloidal lithographic nanopatterning via reactive ion etching [J].
Choi, DG ;
Yu, HK ;
Jang, SG ;
Yang, SM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (22) :7019-7025
[5]  
Dekkers HFW, 2000, OPTO-ELECTRON REV, V8, P311
[6]   Comparative study of different approaches of multicrystalline silicon texturing for solar cell fabrication [J].
Gangopadhyay, U. ;
Dhungel, S. K. ;
Basu, P. K. ;
Dutta, S. K. ;
Saha, H. ;
Yi, J. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (04) :285-289
[7]   Light Trapping in Silicon Nanowire Solar Cells [J].
Garnett, Erik ;
Yang, Peidong .
NANO LETTERS, 2010, 10 (03) :1082-1087
[8]   Properties of ultrafast laser textured silicon for photovoltaics [J].
Iyengar, Vikram V. ;
Nayak, Barada K. ;
More, Karren L. ;
Meyer, Harry M., III ;
Biegalski, Michael D. ;
Li, Jian V. ;
Gupta, Mool C. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (10) :2745-2751
[9]  
Kelzenberg MD, 2010, NAT MATER, V9, P239, DOI [10.1038/NMAT2635, 10.1038/nmat2635]
[10]   Fabrication of antireflective nanostructures for crystalline silicon solar cells by reactive ion etching [J].
Lin, Hsin-Han ;
Chen, Wen-Hua ;
Wang, Chi-Jen ;
Hong, Franklin Chau-Nan .
THIN SOLID FILMS, 2013, 529 :138-142