Effect of energetic ion irradiation on CdI2 films

被引:81
作者
Rawat, RS [1 ]
Arun, P
Vedeshwar, AG
Lee, P
Lee, S
机构
[1] Nanyang Technol Univ, Natl Inst Educ, Singapore 2263, Singapore
[2] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[3] Int Ctr Dense Magnetised Plasma, Warsaw, Poland
关键词
D O I
10.1063/1.1738538
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of energetic argon ion irradiation, using a 3.3 kJ pulsed plasma focus device, is studied systematically on a 4H polytype (002)-oriented CdI2 stoichiometric film having compressive residual stress. The CdI2 films were exposed to energetic ions from the plasma focus device at different distances from the top of the central electrode. The irradiation was found to change the orientation of the film to (110) at certain moderate irradiation distances. A linear decrease in grain size and residual stress was observed with decreasing irradiation distance (or increasing ion energy), consistent with both structural and morphological observations. The direct optical energy gap E-g was found to increase linearly at the rate 15 mueV/atm with the compressive stress. The combined data of present compressive stress and from earlier reported tensile stress show a consistent trend of E-g change with stress. The iodine-iodine distance in the unit cell could be responsible for the observed change in E-g with stress. (C) 2004 American Institute of Physics.
引用
收藏
页码:7725 / 7730
页数:6
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