Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2

被引:141
作者
Cai, Lili [1 ]
McClellan, Connor J. [2 ]
Koh, Ai Leen [3 ]
Li, Hong [1 ,4 ]
Yalon, Eilam [2 ]
Pop, Eric [2 ,5 ]
Zheng, Xiaolin [1 ]
机构
[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Stanford Nano Shared Facil, Stanford, CA 94305 USA
[4] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[5] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
Flame synthesis; MoO3; monolayer; WSe2; p-type doping; transition metal dichalcogenides; FIELD-EFFECT TRANSISTORS; DER-WAALS EPITAXY; MOLYBDENUM TRIOXIDE; MAGNETIC-PROPERTIES; NANOWIRE-ARRAYS; LAYER MOO3; MOS2; NANOSTRUCTURES; OXYGEN; PERFORMANCE;
D O I
10.1021/acs.nanolett.7b01322
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) molybdenum trioxide (MoO3) with mono- or few-layer thickness can potentially advance many applications, ranging from optoelectronics, catalysis, sensors, and batteries to electrochromic devices. Such ultrathin MoO3 sheets can also be integrated with other 2D materials (e.g., as dopants) to realize new or improved electronic devices. However, there is lack of a rapid and scalable method to controllably grow mono- or few-layer MoO3. Here, we report the first demonstration of using a rapid (<2 min) flame synthesis method to deposit mono- and few layer MoO3 sheets (several microns in lateral dimension) on a wide variety of layered materials, including mica, MoS2, graphene, and WSe2, based on van der Waals epitaxy. The flame-grown ultrathin MoO3 sheet functions as an efficient hole doping layer for WSe2, enabling WSe2 to reach the lowest sheet and contact resistance reported to date among all the p-type 2D materials (--6.5 k0/111 and-418 kSZ"ftm, respectively). These results demonstrate that flame synthesis is a rapid and scalable pathway to growing atomically thin 2D metal oxides, opening up new opportunities for advancing 2D electronics.
引用
收藏
页码:3854 / 3861
页数:8
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