Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment

被引：3
作者：
Sasinkova, Vlasta [1 ]
Huran, Jozef [2 ]
Kleinova, Angela [3 ]
Bohacek, Pavol [2 ]
Arbet, Juraj [2 ]
Sekacova, Maria [2 ]
机构：
[1] Slovak Acad Sci, Inst Chem, Bratislava 84538, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
[3] Slovak Acad Sci, Inst Polymer, Bratislava 84541, Slovakia
来源：
RELIABILITY OF PHOTOVOLTAIC CELLS, MODULES, COMPONENTS, AND SYSTEMS VIII | 2015年 / 9563卷
关键词：
SiC film; plasma technology; RAMAN spectroscopy; electrical characterization; CHEMICAL-VAPOR-DEPOSITION; LAYER;
D O I：
10.1117/12.2186749
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Amorphous silicon carbide films were deposited by plasma enhanced chemical vapor deposition (PECVD) technology using SiH4, CH4, H-2 and NH3 gas as precursors. The concentration of elements in the films was determined by RBS and ERD analytical method. Chemical compositions were analyzed by FT-IR spectroscopy. Raman spectroscopy study of the SiC films were performed by using a Raman microscope. Irradiation of samples with neutrons to fluencies A(7.9x10(14) cm(-2)), B(5x10(15) cm(-2)) and C(3.4x10(16) cm(-2)) was performed at room temperature. Raman spectroscopy results of SiC films showed decreasing of Raman band feature intensity after neutron irradiation and slightly decreased with increased neutron fluencies. Raman spectra differences between types of films before and after neutron irradiation are discussed. The electrical properties of SiC films were determined by the I-V measurement at 295 K. The measured currents were greater (about two order) after irradiation than the current before irradiation for all samples and rose up with neutron fluencies.
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