AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

被引：35

作者：

Jmerik, V. N. ^{[1
]}

Shubina, T. V. ^{[1
]}

Mizerov, A. M. ^{[1
]}

Belyaev, K. G. ^{[1
]}

Sakharov, A. V. ^{[1
]}

Zamoryanskaya, M. V. ^{[1
]}

Sitnikova, A. A. ^{[1
]}

Davydov, V. Yu. ^{[1
]}

Kop'ev, P. S. ^{[1
]}

Lutsenko, E. V. ^{[2
]}

Rzheutskii, N. V. ^{[2
]}

Danilchik, A. V. ^{[2
]}

Yablonskii, G. P. ^{[2
]}

Ivanov, S. V. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, RAS, St Petersburg 194021, Russia

[2] NAS Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; Light-emitting diodes; SURFACE;

D O I：

10.1016/j.jcrysgro.2008.11.080

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Al-rich AlGaN layers and quantum well (QW) structures with a reasonable structural quality have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich stoichiometric conditions directly on c-sapphire. The bowing parameter of 1.1 eV for the compositional dependence of AlGaN band gap energy has been determined using an electron-probe microanalysis, Raman spectroscopy and optical transmission spectroscopy. A successful application of a sub-monolayer digital-alloying (SMDA) technique in PA-MBE for fabrication of AlGaN-based multiple QW structures, including deep-UV MQW light-emitting diodes, has been demonstrated for the first time. These structures exhibit both photo- and electroluminescence in the spectral range of 300-320 nm at room temperature. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2080 / 2083

页数：4

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