Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles

被引：1

作者：

Wang, Zhong ^{[1
]}

Chen, Hui ^{[1
]}

Chu, Ying ^{[1
]}

Cheng, Yan ^{[1
]}

Zhu, Lei ^{[1
]}

Jian, Xuyu ^{[1
]}

Yu, Haijun ^{[1
]}

机构：

[1] Gen Res Inst NonFerrous Met, Energy Mat & Technol Res Inst, Beijing 100088, Peoples R China

来源：

MATERIALS RESEARCH, PTS 1 AND 2 | 2009年 / 610-613卷

关键词：

Thermoelectric Materials; Microstructure; Si-20at%Ge alloys; Spark Plasma Sintering; PERFORMANCE; PLASMA; FE;

D O I：

10.4028/www.scientific.net/MSF.610-613.399

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiGe alloy composite material including TiN nanoparticle were prepared. The TiN nanoparticles as the inert scattering center were fabricated by Nitrogen plasma-metal reaction. The sintered samples were characterized by electrical resistivity and seebeck coefficient measurement. Adding nanophase inclusion into the SiGe alloy matrix., the Seebeck coefficient increased, the electrical conductivity decreased and the electrical power factor only slightly reduced.

引用

页码：399 / 402

页数：4

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