Isolation effect on organic thin film transistors for low hysteresis characteristics

Pentacene-based organic thin film transistors (OTFTs) show a relative degradation of their electric characteristics, especially hysteresis, because the pentacene active layer is very susceptible to moisture, oxygen, and other ambient conditions. For commercial applications of organic devices, the stability of the organic materials is one of the most important issues. Therefore, if stable OTFTs are to be produced, it is necessary to develop methods to protect them from damage. In this study, an optimized buffer layer was used to reduce the hysteresis characteristics. We fabricated hysteresis-free OTFTs with less damage by using this buffer layer. We also fabricated a p-type metal-oxide semiconductor (pMOS) inverter by using OTFTs with isolation layers, and we measured its electrical properties.