A study of ion channeling patterns at minor axes in silicon

被引：7

作者：

Motapothula, M. ^{[1
,2
,3
]}

Dang, Z. Y. ^{[1
,3
]}

Venkatesan, T. ^{[2
]}

Breese, M. B. H. ^{[1
,3
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Ctr Ion Beam Applicat, Singapore 117542, Singapore

[2] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117576, Singapore

[3] Natl Univ Singapore, SSLS, Singapore 117603, Singapore

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 330卷

关键词：

Ion channeling; Minor axes; Silicon; Crystallography; Ion implantation; CHARGED-PARTICLES; SINGLE-CRYSTALS; MEV PROTONS; SCATTERING; SI;

D O I：

10.1016/j.nimb.2014.03.021

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present a comprehensive study of channeling patterns showing the angular distributions of 2 MeV protons which are transmitted through a 55 nm thick [001] silicon membrane along, and close to major and minor axes. The use of such ultra-thin membranes allows the relationship between aligned and tilted patterns to be clearly observed and a correlation made between lattice geometry and pattern distribution across many axes. We study the effect of minor planes {11n} (n odd) at axes which they intersect, where their changing lattice geometry results in a variety of effects. The origin of these patterns is studied with Monte Carlo simulations and we show how one may interpret aspects of the observed patterns to determine the corresponding lattice arrangement. At axes which have a single spacing between atom rows produce the well-known 'doughnut' distribution at small axial tilts. In comparison, axes which incorporate atom rows with a different spacing or geometry produce more complex channeling patterns which exhibit a secondary, inner feature produced by beam incident on these rows. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：24 / 32

页数：9

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