Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene

被引：197

作者：

Rana, Farhan ^{[1
]}

George, Paul A. ^{[1
]}

Strait, Jared H. ^{[1
]}

Dawlaty, Jahan ^{[1
]}

Shivaraman, Shriram ^{[1
]}

Chandrashekhar, Mvs ^{[1
]}

Spencer, Michael G. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 11期

基金：

美国国家科学基金会;

关键词：

carbon; electron density; electron-hole recombination; hole density; impurity scattering; nanostructured materials; phonons; EPITAXIAL GRAPHENE;

D O I：

10.1103/PhysRevB.79.115447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in graphene are presented. The transverse and the longitudinal optical phonon modes (E-2g modes) near the zone center (Gamma point) contribute to intravalley interband carrier scattering. At the zone edge [K(K-') point], only the transverse optical phonon mode (A(1)(') mode) contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone-center phonons. The calculated recombination times range from less than a picosecond to more than hundreds of picoseconds and are strong functions of temperature and electron and hole densities. The theoretical calculations agree well with experimental measurements of the recombination rates of photoexcited carriers in graphene.

引用

页数：5

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