Measurement of material uniformity using 3-D position sensitive CdZnTe gamma-ray spectrometers

被引:22
作者
He, Z [1 ]
Li, W
Knoll, GF
Wehe, DK
Stahle, CM
机构
[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
[2] NASA, Goddard Space Flight Ctr, Detector Syst Branch, Greenbelt, MD 20771 USA
关键词
gamma-ray spectrometers; semiconductor; CdZnTe; position sensitive gamma-ray detectors;
D O I
10.1016/S0168-9002(99)00860-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present results from two 1 cm(3) CdZnTe gamma-ray spectrometers with full 3-D position sensitivity. To our knowledge, these are the first reported semiconductor spectrometers that provide independent spectral data for each of over 2000 volume elements. Energy resolutions of 1.5-1.6% FWHM and position resolutions of 0.7 x 0.7 x 0.5 mm were obtained at 662 keV gamma-ray energy from the central region of both detectors for single-pixel events. With the 3-D position sensing capability variations in spectral response over the detector volume were recorded using a Cs-137 source. These measurements allow a study of full-energy peak efficiency, mean ionization energy and electron trapping as a function of 3-D position. The effects of material non-uniformity on detector spectroscopic performance are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:459 / 467
页数:9
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