Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga2O3 Nanowires

被引：78
|
作者：
Maximenko, S. I. [1 ]
Mazeina, L. [1 ]
Picard, Y. N. [1 ]
Freitas, J. A., Jr. [1 ]
Bermudez, V. M. [1 ]
Prokes, S. M. [1 ]
机构：
[1] USN, Div Elect Sci & Technol, Res Lab, Washington, DC 20375 USA
来源：
NANO LETTERS | 2009年 / 9卷 / 09期
关键词：
BETA-GA2O3; THIN-FILM; LUMINESCENCE; ABSORPTION; SCIENCE;
D O I：
10.1021/nl901514k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga2O3 nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by energy dispersive spectroscopy and electron diffraction. A sharp transition from green to red emission correlates with a phase transition of beta-Ga2O3 to polycrystalline SnO2. The origin of the green emission band is discussed based on ab initio calculation results.
引用
收藏
页码：3245 / 3251
页数：7
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