Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga2O3 Nanowires

被引：78
|
作者：
Maximenko, S. I. [1 ]
Mazeina, L. [1 ]
Picard, Y. N. [1 ]
Freitas, J. A., Jr. [1 ]
Bermudez, V. M. [1 ]
Prokes, S. M. [1 ]
机构：
[1] USN, Div Elect Sci & Technol, Res Lab, Washington, DC 20375 USA
来源：
NANO LETTERS | 2009年 / 9卷 / 09期
关键词：
BETA-GA2O3; THIN-FILM; LUMINESCENCE; ABSORPTION; SCIENCE;
D O I：
10.1021/nl901514k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga2O3 nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by energy dispersive spectroscopy and electron diffraction. A sharp transition from green to red emission correlates with a phase transition of beta-Ga2O3 to polycrystalline SnO2. The origin of the green emission band is discussed based on ab initio calculation results.
引用
收藏
页码：3245 / 3251
页数：7
相关论文
共 50 条
  • [1] Sn-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering
    Lee, Su Yong
    Kang, Hyon Chol
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (01)
  • [2] Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3-SnO2 Heterostructures for Gas Sensing Applications
    Mazeina, Lena
    Picard, Yoosuf N.
    Maximenko, Serguei I.
    Perkins, F. Keith
    Glaser, Evan R.
    Twigg, Mark E.
    Freitas, Jaime A., Jr.
    Prokes, Sharka M.
    CRYSTAL GROWTH & DESIGN, 2009, 9 (10) : 4471 - 4479
  • [3] The effect of annealing on the Sn-doped (-201) β-Ga2O3 bulk
    Feng, Boyuan
    He, Gaohang
    Zhang, Xiaodong
    Chen, Xiao
    Li, Zhengcheng
    Xu, Leilei
    Huang, Rong
    Feng, Jiagui
    Wu, Ying
    Jia, Zhitai
    Yu, Hongyu
    Zeng, Zhongming
    Ding, Sunan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 147
  • [4] Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3
    Polyakov, A. Y.
    Smirnov, N. B.
    Shchemerov, I. V.
    Gogova, D.
    Tarelkin, S. A.
    Pearton, S. J.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (11)
  • [5] Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3
    Pearton, S.J. (spear@mse.ufl.edu), 1600, American Institute of Physics Inc. (123):
  • [6] Surface relaxation and rumpling of Sn-doped β-Ga2O3(010)
    Pancotti, A.
    Back, T. C.
    Hamouda, W.
    Lachheb, M.
    Lubin, C.
    Soukiassian, P.
    Boeckl, J.
    Dorsey, D.
    Mou, S.
    Asel, T.
    Geneste, G.
    Barrett, N.
    PHYSICAL REVIEW B, 2020, 102 (24)
  • [7] Synthesis and cathodoluminescence of β-Ga2O3 nanowires with holes
    Zhang, Xitian
    Liu, Zhuang
    Hark, Suikong
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (03) : 1284 - 1287
  • [8] Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs
    Dang, Giang T.
    Kawaharamura, Toshiyuki
    Furuta, Mamoru
    Allen, Martin W.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) : 3640 - 3644
  • [9] Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
    Xuejian Du
    Zhao Li
    Caina Luan
    Weiguang Wang
    Mingxian Wang
    Xianjin Feng
    Hongdi Xiao
    Jin Ma
    Journal of Materials Science, 2015, 50 : 3252 - 3257
  • [10] Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
    Du, Xuejian
    Li, Zhao
    Luan, Caina
    Wang, Weiguang
    Wang, Mingxian
    Feng, Xianjin
    Xiao, Hongdi
    Ma, Jin
    JOURNAL OF MATERIALS SCIENCE, 2015, 50 (08) : 3252 - 3257
12345